Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Description
APT6013B2LL APT6013LLL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg.
Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage B2LL
600V 43A 0.
130W
T-MAX™
TO-264
LLL
• Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT6013 UNIT Volts Amps
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L A C I N H C N E T IO E T C MA N A OR V AD INF
43 172 ±30 ±40 565 4.
52 300 43 50
(Repetitive and Non-Repetitive)
1 4
600
Volts Watts W/°C °C Amps mJ
-55 to 150
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 43 0.
130 100 500 ±100 3 5
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.
5 ID[Cont.
])
Ohms µA nA Volts
050-7053 Rev- 8-2001
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.
5mA)
CAUTION: These Devices are Sensitive to Ele...
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