N-Channel MOSFET
Description
PHP/PHB/PHD55N03LTA
TrenchMOS™ Logic Level FET
Rev.
04 — 4 September 2002 Product data
1.
Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.
Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK).
2.
Features
s Low on-state resistance s Fast switching.
3.
Applications
s Computer motherboard high frequency DC to DC converters.
4.
Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol Simplified outline
mb mb mb
Pin Description 1 2 3 mb gate (g) drain (d) source (s) mounting base, connected to drain (d)
[1]
Symbol
d
g s
2 2 1
MBK106
MBB076
1 3
MBK116
3
MBK091
Top view
1 2 3
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
SOT428 (D-PAK)
It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
Philips Semiconductors
PHP/PHB/PHD55N03LTA
TrenchMOS™ Logic Level FET
5.
Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C Typ 11 15 Max 25 55 85 175 14 18 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6.
Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VDGR ID VGS IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) drain current (DC) gate-source voltage peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 25 A; tp = 0.
1 ms; VDD = 15 V; RGS = 50 Ω; VGS = 5V; starting Tj = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditi...
Similar Datasheet
