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UPA836TC

NPN SILICON EPITAXIAL TWIN TRANSISTOR

Description

PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TC FEATURES SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package LOW HEIGHT PROFILE: Just 0.55 mm high FLAT LEAD STYLE: Reduced lead inductance improves electrical performance TWO DIFFERENT DIE TYPES: Q1 - Ideal oscillator transistor Q2 - Ideal buffer amp...

NEC

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