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UPA831TC

NEC

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE


UPA831TC
UPA831TC

PDF File UPA831TC PDF File


Description
DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA831TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.
FEATURES • Low noise Q1 : NF = 1.
2 dB TYP.
, Q2 : NF = 1.
4 dB TYP.
@f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.
0 dB TYP.
, Q2 : |S21e|2 = 12.
0 dB TYP.
@f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5006, 2SC5007) BUILT-IN TRANSISTORS Q1 3-pin ultra super minimold part No.
2SC5006 Q2 2SC5007 ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Taping products (3 kp/reel) Supplying Form 8 mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation side of the tape.
µPA831TC µPA831TC-T1 Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPA831TC.
) Caution Electro-static sensitive devices The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P14554EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan © 1999 µPA831TC ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Ratings Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Q1 VCBO VCEO VEBO IC PT Note Unit Q2 20 10 1.
5 65 200 in 1 element 230 in 2 elements V V V mA mW 20 12 3 100 200 in 1 element Junction Temperature Storage Temperature Tj Tstg 150 −65 to +150 150 °C °C 2 Note Mounted on 1.
08 cm × 1.
0 mm gl...



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