Silicon Diffused Power Transistor - NXP
Description
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4550AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.
c monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP.
20 8 t.
b.
f t.
b.
f MAX.
1500 800 30 40 125 3.
0 t.
b.
f t.
b.
f UNIT V V A A W V A A µs µs
Tmb ≤ 25 ˚C IC = 20.
0 A; IB = 5 A f = 32kHz f = 130kHz ICsat = 20 A; f = 32kHz ICsat = 8 A; f = 130kHz
PINNING - SOT430
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
heat collector sink
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-55 MAX.
1500 800 25 40 10 15 10 125 150 150 UNIT V V A A A A A W ˚C ˚C
Tmb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP.
35 MAX.
1.
0 UNIT K/W K/W
1 Turn-off current.
January 1998
1
Rev 1.
000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4550AL
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specifi...
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