NPN/PNP resistor-equipped transistors - NXP
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMD9 NPN/PNP resistor-equipped transistors
Product specification Supersedes data of 1999 Jan 07 1999 May 20
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
FEATURES • Transistors with different polarity and built-in bias resistors R1 and R2 (typ.
10 kΩ and 47 kΩ respectively) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in portable equipment • Inverter circuit configurations without use of external resistors.
DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 (SOT363) plastic package.
PINNING PIN 1, 4 2, 5 6, 3 MARKING TYPE NUMBER PUMD9 MARKING CODE Dt9 emitter base DESCRIPTION TR1; TR2 TR1; TR2
1, 4
MBK120
PUMD9
handbook, halfpage
6 5 4 R1 TR1 R2
5
4
6
R2 TR2 R1
1 Top view
2
3
MAM343
1
2
3
Fig.
1 Simplified outline (SC-88) and symbol.
2, 5
6, 3
collector TR1; TR2
Fig.
2 Equivalent inverter symbol.
1999 May 20
2
Philips Semiconductors
Product specification
NPN/PNP resistor-equipped transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS − − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C; note 1 − MIN.
PUMD9
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Refer to SC-88 standard mounting conditions.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SC-88 standard mounting conditions.
PARAMETER CONDITIONS VALUE 416 UNIT K/W total power dissipation 300 mW output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature +40 −6 100 100 200 +150 150 +150 V V mA mA...
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