NPN/PNP resistor-equipped transistors - NXP
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMD48 NPN/PNP resistor-equipped transistors
Product Specification 1999 Apr 22
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
FEATURES • Transistors with different polarity and built-in bias resistors R1 (typ.
47 and 47 kΩ) and R2 (typ.
2.
2 and 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 plastic package.
Fig.
2 Equivalent inverter symbol.
2, 5 1, 4
MBK120
PUMD48
handbook, halfpage
6 5 4 R1 TR1 R2
5
4
6
R2 TR2 R1
1 Top view
2
3
MAM343
1
2
3
Fig.
1 Simplified outline (SC-88) and symbol.
PINNING PIN 1, 4
6, 3
DESCRIPTION emitter base collector TR1; TR2 TR1; TR2 TR1; TR2
2, 5 6, 3
MARKING TYPE NUMBER PUMD48 MARKING CODE 4t8
1999 Apr 22
2
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS − − − − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 Tamb ≤ 25 °C − MIN.
PUMD48
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage TR1 positive negative input voltage TR2 positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Notes 1.
Refer to SC-88 standard mounting conditions.
total power dissipation 300 mW output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature +5 −12 100 100 200 +150 150 +150 V V mA mA mW °C °C °C +40 −10 V V open emitter open base open collector 50 50 10 V V V
1999 Apr 22
3
Philips Semiconducto...
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