PNP/PNP resistor-equipped transistors
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMB2 PNP resistor-equipped double transistor
Product specification 1999 Aug 03
Philips Semiconductors
Product specification
PNP resistor-equipped double transistor
FEATURES • Transistors with built-in bias resistors R1 and R2 (typ.
47 kΩ each) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION PNP resistor-equipped double transistor in an SC-88 (SOT363) plastic package.
MARKING TYPE NUMBER PUMB2 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 MARKING CODE Bt2
2, 5 1, 4
MBK120
PUMB2
handbook, halfpage
6 5 4 R1 TR1 R2
5
4
6
R2 TR2 R1
1 Top view
2
3
MAM426
1
2
3
Fig.
1 Simplified outline (SC-88) and symbol.
6, 3
Fig.
2 Equivalent inverter symbol.
1999 Aug 03
2
Philips Semiconductors
Product specification
PNP resistor-equipped double transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL Per transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Refer to SC-88 standard mounting conditions.
total power dissipation Tamb ≤ 25 °C; note 1 − 300 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 +10 −40 −100 −100 200 +150 150 +150 open emitter open base open collector − − − −50 −50 −10 PARAMETER CONDITIONS MIN.
PUMB2
MAX.
UNIT
V V V V V mA mA mW °C °C °C mW
1999 Aug 03
3
Philips Semiconductors
Product specification
PNP resistor-equipped double transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SC-...
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