DatasheetsPDF.com

PTF210901

Infineon Technologies AG

LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz


PTF210901
PTF210901

PDF File PTF210901 PDF File


Description
PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8.
0 dB, 3.
84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency Features • • Internal matching for wideband performance Typical two–carrier 3GPP WCDMA performance - Average output power = 19 W at –37 dBc - Efficiency = 25% Typical CW performance - Output power at P–1dB = 105 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR at 28 V, 90 W (CW) output power • -30 Efficiency (%), Gain (dB) IMD (dBc), ACPR (dBc) • • • Output Power, Avg.
(dBm) PTF210901E Package 30248 ESD: Electrostatic discharge sensitive device — observe handling precautions! RF Performance at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 1050 mA, P OUT = 19 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth 3.
84 MHz, 8.
0 dB peak/average @ 0.
01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD Gps Min — — — Typ –37 15 25 Max — — — Units dBc dB % ηD Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 1050 mA, POUT = 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Data Sheet 1 Symbol Gps Min 13.
5 36 — Typ 15 38 –30 Max — — –28 Units dB % dBc 2004-01-16 ηD IMD PTF210901 Electrical Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Drain–Source Breakdown Voltage Drain Lea...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)