LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
Description
PTF180601
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz
Description
The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band.
Full gold metallization ensures excellent device lifetime and reliability.
EDGE EVM Performance EVM & Efficiency vs.
Power Output
VDD = 28 V, IDQ = 0.
8 A, f = 1989.
8 MHz
4 40
Features
• • Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.
5 dB - Efficiency = 35% Typical CW performance - Output power at P–1dB = 75 W - Gain = 15.
5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power
•
EVM RMS (Average %).
.
•
3 Efficiency 30
Efficiency (%)
• • •
2
20
1 EVM 0 35 37 39 41 43 45
10
0
PTF180601C Package 21248 PTF180601E Package 30248
Output Power (dBm)
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 800 mA, P OUT = 22 W, f = 1989.
8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 KHz Modulation Spectrum @ 600 KHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps η D
Min
— — — — —
Typ
1.
7 –60 –73 16.
5 32
Max
— — — — —
Units
% dBc dBc dB %
Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 800 mA, POUT = 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps η D IMD
Min
15 30 —
Typ
16.
5 35 –30
Max
— — –28
Units
dB % dBc 2004-05-03
PTF180601
Electrical Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage Drain Leakage Current On–State Resistance Operating Gate Voltage Gate ...
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