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PTF10015

Ericsson

50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor


PTF10015
PTF10015

PDF File PTF10015 PDF File


Description
PTF 10015 50 Watts, 300–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz.
It operates at 55% efficiency and 13.
0 dB of gain.
Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability.
Features • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.
0 dB Typ, 12.
0 dB Min - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% lot traceability Available in Package 20222 as PTF 10031 • • • • • • Typical Power Out & Efficiency vs.
Power In 70 60 90 80 70 Efficiency (%) 40 30 20 10 0 0 1 2 3 4 60 50 A-1 234 569 914 50 VDD = 28 V IDQ = 380 mA f = 960 MHz 40 30 20 Drain Efficiency Output Power Output Pow er (W) 100 15 Package 20235 A-12 1003 1 3456 9743 Package 20222 Input Power (Watts) Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TC = 70°C) All published data is at TC = 25°C unless otherwise indicated.
TSTG RqJC Symbol VDSS VGS TJ PD Value 65 ±20 200 175 1.
0 -65 to +150 1.
0 Unit Vdc Vdc °C Watts W/°C °C °C/W e 1 PTF 10015 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 2.
0 Typ — — — 2.
8 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 380 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f...



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