35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
Description
PTF 10007 35 Watts, 1.
0 GHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.
0 GHz.
It operates at 55% efficiency and 13.
5 dB of gain.
Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.
• Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.
5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability Available in Package 20235 as PTF 10052
• • • • •
Typical Output Power & Efficiency vs.
Input Power
50 Output Pow er (W) 40 80 Ef f iciency (%) 60 40 20 0 0 1 2 3 100
1 A -1 2000 3456 7 9723
Efficiency
Package 20222
Output Power
30 20 10 0
VDD = 28 V IDQ = 300 m A f = 960 MHz
Package 20235
A-1 234 569 999
100 52
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
60 ±20 200 120 0.
7 –40 to +150 1.
4
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10007
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 — 3.
0 —
Typ
70 — — 2.
8
Max
— 1.
0 5.
0 —
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz— all phase angles at frequency of test)
Symbol
Gps P-1dB h Y
Min...
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