1.0 Watt/ 380-500 MHz RF Power Transistor
Description
e
PTB 20204 1.
0 Watt, 380–500 MHz RF Power Transistor
Description
The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz.
Rated at 1.
0 watt minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
1.
0 Watt, 380–500 MHz Class A Characteristics -40 dB Max Two-Tone IMD at 1.
0 W(PEP) Gold Metallization Silicon Nitride Passivated
Typical Output Power vs.
Input Power
2.
0
Output Power (Watts)
1.
6 1.
2 0.
8 0.
4 0.
0 0.
00
202 04
LO TC OD E
VCE = 24 V ICQ = 340 mA f = 500 MHz
0.
03
0.
06
0.
09
0.
12
0.
15
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
60 60 4.
0 0.
5 11 0.
0625 -40 to +150 16
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20204
Electrical Characteristics
Characteristic
Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested)
e
Conditions
IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA VCB = 24 V, IE = 0 A, f = 1 MHz
Symbol
V(BR)CEO V(BR)CES V(BR)EBO hFE Cobo
Min
25 70 4 20 —
Typ
30 — 5 40 4.
4
Max
— — — — —
Units
Volts Volts Volts — pF
RF Specifications (100% Tested)
Characteristic
Gain (VCE = 24 Vdc, Pout = 1.
0 W, ICQ = 340 mA, f = 500 MHz) Two-Tone Intermodulation Distortion (VCE = 24 Vdc, Pout = 1.
0 W(PEP), ICQ = 340 mA, f1 = 500 MHz, f2 = 501 MHz) Load Mismatch Tolerance (VCE = 24 Vdc, Pout = 2 W, ICQ = 340 mA, f = 500 MHz—all phase angles at frequency of test)
Symbol
Gpe IM2
Min
12.
5 —
Typ
13.
5 -44
Max
— -40
Uni...
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