Rectifier diodes Schottky barrier
Description
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance
PBYR10100 series
SYMBOL
QUICK REFERENCE DATA VR = 60 V/ 80 V/ 100 V
k 1
a 2
IF(AV) = 10 A VF ≤ 0.
7 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope.
Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR10100 series is supplied in the conventional leaded SOD59 (TO220AC) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR10 VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature Tmb ≤ 139 ˚C square wave; δ = 0.
5; Tmb ≤ 133 ˚C square wave; δ = 0.
5; Tmb ≤ 133 ˚C t = 10 ms t = 8.
3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN.
60 60 60 60 MAX.
80 80 80 80 10 20 135 150 1 150 175 100 100 100 100 V V V A A A A A ˚C ˚C UNIT
IRRM Tj Tstg
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN.
in free air TYP.
MAX.
UNIT 60 2 K/W K/W
March 1998
1
Rev 1.
200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 10 A; Tj = 125˚C IF = 20 A; Tj = 125˚C IF = 20 A VR = VRWM VR = VRWM; Tj = 125˚C VR = 5 V; f = 1 MHz, T...
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