N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Description
SML100W18
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS 1000V 17.3A ID(cont) RDS(on) 0.570Ω
Faster Switching Lower Leakage TO–267 Hermetic Package
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, ...
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