N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Description
SML100J34
SOT–227 Package Outline.
Dimensions in mm (inches)
3 1 .
5 (1 .
2 4 0 ) 3 1 .
7 (1 .
2 4 8 ) 7 .
8 (0 .
3 0 7 ) 8 .
2 (0 .
3 2 2 ) 1 1 .
8 (0 .
4 6 3 ) 1 2 .
2 (0 .
4 8 0 ) W = 4 .
1 (0 .
1 6 1 ) 4 .
3 (0 .
1 6 9 ) 4 .
8 (0 .
1 8 7 ) H= 4 .
9 (0 .
1 9 3 ) (4 places) 1 2 .
6 (0 .
4 9 6 ) 1 2 .
8 (0 .
5 0 4 ) 2 5 .
2 (0 .
9 9 2 ) 2 5 .
4 (1 .
0 0 0 ) 8 .
9 (0 .
3 5 0 ) 9 .
6 (0 .
3 7 8 )
Hex Nut M 4 (4 places)
1
R
2
4 .
0 (0 .
1 5 7 ) 4 .
2 (0 .
1 6 5 )
0 .
7 5 (0 .
0 3 0 ) 0 .
8 5 (0 .
0 3 3 )
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
4
3.
3 (0 .
1 2 9) 3.
6 (0.
14 3 ) 1 4 .
9 (0.
58 7 ) 1 5 .
1 (0.
59 4 ) 3 0 .
1 (1 .
1 8 5 ) 3 0 .
3 (1 .
1 9 3 ) 3 8 .
0 (1.
4 9 6 ) 3 8 .
2 (1.
5 0 4 )
3
5 .
1 (0 .
2 0 1 ) 5 .
9 (0 .
2 3 2 ) 1 .
9 5 (0 .
0 7 7 ) 2 .
1 4 (0 .
0 8 4 )
R =
4 .
0 (0 .
1 57 ) (2 P lac e s)
S
D
VDSS 1000V 34A ID(cont) RDS(on) 0.
250Ω
• • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular SOT–227 Package
S
G
* Source terminals are shorted internally.
Current handling capability is equal for either Source terminal.
D
G S
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.
063” from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
1000 34 136 ±30 ±40 700 5.
6 –55 to 150 300 34 50 3600
V A A V W W/°C °C A mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 6.
23mH, RG =...
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