HIGH EFFICIENCY DIODE STACK
Description
20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
20DL2C48A, U20DL2C48A, 20FL2C48A, U20FL2C48A
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V z Average Output Rectified Current : IO = 20 A z Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max) z Low Switching Losses and Output Noise
20DL2C48A, 20FL2C48A,
Unit in mm U20DL2C48A, U20FL2C48A
3± 0.
2
JEDEC JEITA TOSHIBA
― ― 12-10D1A
JEDEC JEITA TOSHIBA
― ― 12-10D2A
1 2006-11-08
20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
CHARACTERISTIC
20DL2C48A
Repetitive Peak Reverse Voltage
U20DL2C48A 20FL2C48A
U20FL2C48A
Average Output Rectified Current
Peak One Cycle Surge Forward Current
Junction Temparature Storage Temparature Range
SYMBOL
VRRM
IO IFSM Tj Tstg
RATING
200
300
20 100 (50Hz) 110 (60Hz)
−40~150 −40~150
UNIT
V
A A °C °C
POLARITY
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
20DL2C48A
Peak Forward Voltage
U20DL2C48A 20FL2C48A
U20FL2C48A
Repetitive Peak Reverse Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
VFM
IFM=10A
IRRM trr tfr Rth (j-c)
VRRM=Rated
IF=2A, di / dt=−50A / μs
IF=1A Total DC
VFM, IRRM, trr, tfr: A Value applied to one cell.
MARKING
MIN.
TYP.
MAX.
UNIT
⎯ ⎯ 0.
...
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