P-Channel Enhancement-Mode Vertical DMOS Power FETs
Description
" !iupertexinc.
VP02A
P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVossl BVOGS -40V -60V
-100V
ROSION)
(max) 40
40
40
'OION)
(min)
1.
5A
1.
5A
1.
5A
Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices
TO-39 VP0204N2 VP0206N2 VP0210N2
Order Number I Package
TO-92
TO-220
Quad P-DIP
-
VP0204N5
VP0204N6
VP0206N3 VP0210N3
VP0206N5 VP0210N5
VP0206N6
-
Quad C-DIP VP0204N7 VP0206N7
-
Advanced DMOS Technology
These enhancement-mode (normally-off) power tranSistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
This combination produces devices with the power handling capabilities of bipolartransistors and with the high input impedance and negative temperature coefficient inherent in MOS...
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