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XN2216

Panasonic Semiconductor

Silicon NPN epitaxial planer transistor


XN2216
XN2216

PDF File XN2216 PDF File


Description
Composite Transistors XN2216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.
8 -0.
3 0.
65±0.
15 +0.
2 +0.
25 1.
5 -0.
05 5 0.
65±0.
15 1 0.
95 2.
9 -0.
05 q q Two elements incorporated into one package.
(Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
1.
9±0.
1 +0.
2 4 0.
95 3 2 0.
3 -0.
05 0.
4±0.
2 0.
16 -0.
06 +0.
1 1.
1 -0.
1 q UN1216 × 2 elements 0.
8 s Basic Part Number of Element +0.
2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Emitter (Tr2) 0 to 0.
1 0.
1 to 0.
3 4 : Base 5 : Emitter (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: BA Internal Connection 1 2 3 4 Tr1 5 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency *1 (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL R1 fT VCB = 10V, IE = –2mA, f = 200MHz Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.
3mA VCC = 5V, VB = 0.
5V, RL = 1kΩ VCC = 5V, VB = 2.
5V, RL = 1kΩ –30% 4.
7 150 4.
9 0.
2 +30% 160 0.
5 0.
99 0.
25 V V V kΩ MHz min 50 50 0.
1 0.
5 0.
01 460 typ max Unit V V µA µA mA Ratio between 2 elements +0.
1 1.
45±0.
1 s Features 1 Composite Transistors PT — Ta 500 XN2216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC —...



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