Advanced Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.327Ω (Typ.)
1 2 3
IRF634A
BVDSS = 250 V RDS(on) = 0.45Ω ID = 8.1 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum...
Fairchild Semiconductor
IRF634A PDF File
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