N-Channel Power MOSFET
Description
IRF620
Data Sheet June 1999 File Number
1577.3
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for a...
Intersil Corporation
IRF620 PDF File
Similar Datasheet