8A 600V Stealth Diode
Description
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
August 2018
ISL9R860P2, ISL9R860S3ST
8 A, 600 V, STEALTH™ Diode
Features
• Stealth Recovery trr = 28 ns (@ IF = 8 A) • Max Forward Voltage, VF = 2.
4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant
Applications
• SMPS FWD • Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• Snubber Diode
Package
JEDEC TO-220AC-2L
CATHODE (FLANGE)
ANODE CATHODE
Description
The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications.
The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications.
The low IRR and short ta phase reduce loss in switching transistors.
The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry.
Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
JEDEC TO-263AB(D2-PAK)
CATHODE (FLANGE)
Symbol
K
N/C ANODE
A
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VRRM VRWM
VR IF(AV) IFRM IFSM
PD EAVL TJ, TSTG
TL TPKG
Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 147oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation
Avalanche Energy (1 A, 40 mH) Operating and Storage Temperature Range Maximum Temperature for Soldering
Leads at 0.
063in (1.
6mm) from Case for 10s Package Body for 10s, See Techbrief TB334
Ratings 600 600 600 8 16 100 85 20
-55 to 175
300 260
Unit V V V A A A W mJ °C °C °C
CAUTION: Stresses above those listed in “Absolu...
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