NPN Silicon Transistor
Description
KSC5367
KSC5367
High Voltage and High Reliability
• High speed Switching • Wide Safe Operating Area • High Collector Base Voltage
1
TO-220 2.
Collector 3.
Emitter
1.
Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current *Base Current (Pulse) Power Dissipation(Tc=25) Junction Temperature Storage Temperature Value 1600 800 12 3 6 2 4 80 150 - 65 ~ 150 Units V V V A A A A W °C °C
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Thermal Characteristics TC=25°C unless otherwise noted
Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.
56 62.
5 Unit °C/W
©2001 Fairchild Semiconductor Corporation
Rev.
A1, June 2001
KSC5367
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC =0.
5mA, IC = 0 VCB = 1,600V, IE = 0 VEB = 12V, IC = 0 VCE = 3V, IC = 0.
4A VCE = 10V, IC = 5mA IC = 250mA, IB = 25mA IC = 500mA, IB = 50mA IC = 1A, IB= 0.
2A IC = 3A, IB = 0.
6A IC = 500mA, IB = 50mA VCC = 125V, IC = 0.
5A IB1 = 42mA, IB2 = -333mA RL = 250Ω VCC = 250V, IC = 1A IB1 = 0.
2A, IB2 = -0.
4A RL = 250Ω Min.
1600 800 12 12 8 Typ.
40 0.
5 2.
2 0.
5 0.
5 4.
0 0.
5 Max.
20 20 35 2.
5 4.
5 2.
5 1.
5 V V V V pF µs µs µs µs µs µs Units V V V µA µA
VBE(sat) Cob tON tSTG tF tON tSTG tF
Base-Emitter Saturation Voltage Output Capacitance Turn ON Time Storage Time Fall Time Turn ON Time Storage Time Fall Time
©2001 Fairchild Semiconductor Corporation
Rev.
A1, June 2001
KSC5367
Typical Characteristics
5
100
...
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