4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Description
KM416C4000B, KM416C4100B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs.
Fast Page Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -5 or -6) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification - KM416C4000B(5.
0V, 8K Ref.
) - KM416C4100B(5.
0V, 4K Ref.
) • Active Power Dissipation Unit : mW Speed -45 -5 -6 • Refresh Cycles Part NO.
KM416C4000B* KM416C4100B Refresh cycle 8K 4K Refresh time Normal 64ms
RAS UCAS LCAS W
• Fast Page Mode operation • 2CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Fast parallel test mode capability • TTL(5.
0V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic TSOP(II) package • +5.
0V±10% power supply 4K 715 660 605
8K 550 495 440
FUNCTIONAL BLOCK DIAGRAM
Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer
VBB Generator
* Access mode & RAS only refresh mode : 8K cycle/64ms CAS-before-RAS & Hidden refresh mode : 4K cycle/64ms • Performance Range Speed -45 -5 -6
Refresh Timer Refresh Control Refresh Counter
Row Decoder
DQ0 to DQ7
Memory Array 4,194,304 x 16 Cells
OE DQ8 to DQ15
tRAC
45ns 50ns 60ns
tCAC
12ns 13ns 15ns
tRC
80ns 90ns 110ns
tPC
31ns 35ns 40ns
A0~A12 (A0~A11)*1 A0~A8 (A0~A9)*1
Row Address Buffer Col.
Address Buffer Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO.
, LTD.
reserves the right to change products and specifications without notice.
KM416C4000B,...
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