Digital transistor
Description
DTA125TUA / DTA125TKA / DTA125TSA
Transistors
Digital transistor (built-in resistor)
DTA125TUA / DTA125TKA / DTA125TSA
!Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation, making device design easy.
4) Higher mounting densities can be achieved.
!External dimensions (Units : mm)
0.
65 0.
65 0.
7
DTA125TUA
0.
3
(3)
(1)
1.
25 2.
1
0.
15
0.
2
(2)
0.
1to0.
4
0to0.
1
Each lead has same dimensions
0.
9
1.
3
2.
0
ROHM : UMT3 EIAJ : SC-70
(1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain)
0.
4
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power DTA125TUA / DTA125TKA dissipation DTA125TSA Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Limits −50 −50 −5 −100 200 300 150 −55 ∼ +150
Unit V V
(3)
1.
6 2.
8
0.
15
mW °C °C
0.
3to0.
6
0to0.
1
Each lead has same dimensions
0.
8
1.
1
V mA
0.
95 0.
95 1.
9 2.
9
!Absolute maximum ratings (Ta = 25°C)
(2)
(1)
DTA125TKA
ROHM : SMT3 EIAJ : SC-59
(1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain)
!Package, marking, and packaging specifications
Part No.
Package Marking Packaging code Basic ordering unit (pieces) DTA125TUA UMT3 9A T106 3000 DTA125TKA SMT3 9A T146 3000 DTA125TSA SPT − TP 5000
DTA125TSA
3
4
2
(15Min.
)
3Min.
0.
45 2.
5 5 (1) (2) (3)
Taping specifications
0.
5 0.
45
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Symbol BVCBO ...
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