Silicon NPN Transistor
Description
Darlington
2SD2083
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=12A IC=12A, IB=24mA IC=12A, IB=24mA VCE=12V, IE=–1A VCB=10V, f=1MHz 2SD2083 10max 10max 120min 2000min 1.8max 2.5max 20typ 340typ V MHz pF
5.45±0.1 B C E 20.0min 4.0max
Equivalent circuit
B
C
(2k Ω) (100 Ω) E...
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