Silicon NPN Transistor
Description
Transistor
2SD1996
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
6.
9±0.
1
0.
15
0.
7
4.
0
1.
05 2.
5±0.
1 (1.
45) ±0.
05 0.
8
s Features
q q q q
0.
65 max.
14.
5±0.
5 0.
45–0.
05
+0.
1
Low collector to emitter saturation voltage VCE(sat).
Low ON resistance Ron.
High foward current transfer ratio hFE.
Allowing supply with the radial taping.
(Ta=25˚C)
Ratings 25 20 12 1 0.
5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C
0.
45–0.
05 2.
5±0.
5 1 2 2.
5±0.
5 3
+0.
1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
1:Emitter 2:Collector 3:Base MT1 Type Package
1.
2±0.
1 0.
65 max.
0.
1 0.
45+ – 0.
05
2.
5±0.
1
s Absolute Maximum Ratings
0.
85
1.
0
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse
(HW type)
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3
*3R on
Conditions VCB = 25V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.
5A*2 VCE = 2V, IC = 1A*2 IC = 0.
5A, IB = 20mA IC = 0.
5A, IB = 50mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f= 1MHz
min
typ
max 100
3.
5±0.
1
0.
8
Unit nA V V V
25 20 12 200 60 0.
13 0.
4 1.
2 200 10 1.
0
*2
800
V V MHz pF Ω
Measurement circuit
1kΩ
Pulse measurement
*1h
FE1
Rank classification
R 200 ~ 350 S 300 ~ 500 T 400 ~ 800
IB=1mA f=1kHz V=0.
3V
Rank hFE1
VB
VV
VA
VB Ron= !1000(Ω) VA–VB
1
Transistor
PC — Ta
800 1.
2 IB=4.
0mA 1.
0 Ta=25˚C 3.
5mA 3.
0mA...
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