4 MEG x 16 EDO DRAM
Description
4 MEG x 16 EDO DRAM
EDO DRAM
FEATURES
• Single +3.
3V ±0.
3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 column addresses (4) 13 row, 9 column addresses (8) • High-performance CMOS silicon-gate process • All inputs, outputs and clocks are LVTTL-compatible • Extended Data-Out (EDO) PAGE MODE access • 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms • Self refresh for low-power data retention
4X16E43V
PIN ASSIGNMENT (Top View) 50-Pin TSOP
VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC VCC WE# RAS# NC NC NC NC A0 A1 A2 A3 A4 A5 VCC
†A12
OPTIONS
• Plastic Package 50-pin TSOP (400 mil) • Timing 50ns access 60ns access • Refresh Rates 4K 8K
• Operating Temperature Range Commercial (0°C to +70°C) Extended (-40°C to +85°C)
MARKING
TW -5 -6 4 8
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26
VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 NC VSS CASL# CASH# OE# NC NC NC/A12† A11 A10 A9 A8 A7 A6 VSS
for "8K" version, NC for "4K" version.
4X16E43V 4X16E83V
None IT
Configuration Refresh Row Address Column Addressing
4 Meg x 16 4K 4K (A0-A11) 1K (A0-A9)
4 Meg x 16 8K 8K (A0-A12) 512 (A0-A8)
NOTE: 1.
The “#” symbol indicates signal is active LOW.
4 MEG x 16 EDO DRAM PART NUMBERS
Part Number Example:
MEM4X16E43VTW-5
PART NUMBER 4X16E43VTW-x 4X16E83VTW-x
tCAC tCAS
REFRESH ADDRESSING 4 8
PACKAGE 400-TSOP 400-TSOP
KEY TIMING PARAMETERS
SPEED -5 -6
tRC 84ns 104ns tRAC
50ns 60ns
tPC 20ns 25ns
tAA 25ns 30ns
13ns 15ns
8ns 10ns
x = speed
1
4 MEG x 16 EDO DRAM
FUNCTIONAL BLOCK DIAGRAM 4X16E43V (12 row addresses)
WE#
CASL# CASH#
CAS#
DATA-IN BUFFER
16
DQ0DQ15
NO.
2 CLOCK GENERATOR
DATA-OUT BUFFER
16
OE#
16
10
COLUMNADDRESS BUFFER(10) REFRESH CONTROLLER
16
10
COLUMN DECODER
1,024
SENSE AMPLIFIERS I/O GATING
1,024 x 16
A0A11
REFRESH COUNTER
ROW SELECT
12 12 ROWADDRESS BUFFERS (12)
ROW DECODER
COMPLEMEN...
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