6-Pin DIP Optoisolators
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 4N29/D
6-Pin DIP Optoisolators Darlington Output
The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
This series is designed for use in applications requiring high collector output currents at lower input currents.
• Higher Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix “V” must be included at end of part number.
VDE 0884 is a test option.
Applications • Low Power Logic Circuits • Interfacing and coupling systems of different potentials and impedances • Telecommunications Equipment • Portable Electronics • Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(3) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.
94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 5 30 150 150 1.
76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 120 1.
41 Volts mA mW mW/°C Symbol Value Unit
GlobalOptoisolator™
4N29 4N29A 4N30 * 4N31 4N32 * 4N33 *
[CTR = 100% Min] [CTR = 50% Min] [CTR = 500% Min] *Motorola Preferred Devices
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE CASE 730A–04
SCHEMATIC
1 2 3 PIN 1.
2.
3.
4.
5.
6.
LED ANODE LED CATHODE N.
C.
EMITTER COLLECTOR BASE 6 5 4
1.
Difference in 4N32 and 4N33 is JEDEC R...
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