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4AK20

Hitachi Semiconductor

Silicon N-Channel Power MOS FET Array


4AK20
4AK20

PDF File 4AK20 PDF File



Description
4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.
25 , VGS = 10 V, I D = 2.
5 A R DS(on) 0.
35 , VGS = 4 V, I D = 2.
5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver • Discrete packaged devices of same die: 2SK1300, 2SK1305 4AK20 Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg 2 2 1 Rating 100 ±20 5 20 5 28 4 150 –55 to +150 Unit V V A A A W W °C °C 2 4AK20 Electrical Characteristics (Ta = 25°C) (1 Unit) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 — — 1.
0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1.
Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.
0 — — — — — — — — — Typ — — — — — 0.
2 0.
25 5.
0 525 205 60 5 30 180 65 1.
0 170 Max — — ±10 250 2.
0 0.
25 0.
35 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0 dIF/dt = 50 A/µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2.
5 A VGS = 10 V*1 I D = 2.
5 A VGS = 4 V*1 I D = 2.
5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 2.
5 A VGS = 10 ...



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