Triple 3-Input NAND Gates
Description
54LS10 DM54LS10 DM74LS10 Triple 3-Input NAND Gates
June 1989
54LS10 DM54LS10 DM74LS10 Triple 3-Input NAND Gates
General Description
This device contains three independent gates each of which performs the logic NAND function
Features
Y
Alternate Military Aerospace device (54LS10) is available Contact a National Semiconductor Sales Office Distributor for specifications
Connection Diagram
Dual-In-Line Package
TL F 6349 – 1
Order Number 54LS10DMQB 54LS10FMQB 54LS10LMQB DM54LS10J DM54LS10W DM74LS10M or DM74LS10N See NS Package Number E20A J14A M14A N14A or W14B
Function Table
Y e ABC Inputs A X X L H B X L X H C L X X H Output Y H H H L
H e High Logic Level L e Low Logic Level X e Either Low or High Logic Level
C1995 National Semiconductor Corporation
TL F 6349
RRD-B30M105 Printed in U S A
Absolute Maximum Ratings (Note) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications
Supply Voltage 7V Input Voltage 7V Operating Free Air Temperature Range b 55 C to a 125 C DM54LS and 54LS DM74LS 0 C to a 70 C Storage Temperature Range
b 65 C to a 150 C
Note The ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed The device should not be operated at these limits The parametric values defined in the ‘‘Electrical Characteristics’’ table are not guaranteed at the absolute maximum ratings The ‘‘Recommended Operating Conditions’’ table will define the conditions for actual device operation
Recommended Operating Conditions
Symbol VCC VIH VIL IOH IOL TA Parameter Min Supply Voltage High Level Input Voltage Low Level Input Voltage High Level Output Current Low Level Output Current Free Air Operating Temperature
b 55
DM54LS10 Nom 5 Max 55 Min 4 75 2 07
b0 4
DM74LS10 Nom 5 Max 5 25
Units V V 08
b0 4
45 2
V mA mA C
4 125 0
8 70
Electrical Characteristics over recommended operating free air temperature range (unless ot...
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