500V P-Channel MOSFET - Fairchild Semiconductor
Description
FQPF1P50
December 2000
QFET
FQPF1P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes.
These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
TM
Features
• • • • • • -1.
03A, -500V, RDS(on) = 10.
5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
S
!
● ●
G!
▶ ▲
●
GD S
TO-220F
FQPF Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF1P50 -500 -1.
03 -0.
65 -4.
12 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
110 -1.
03 2.
8 -4.
5 28 0.
22 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 4.
46 62.
5 Units °C/W °C/W
©2000 Fairchild Semiconductor International
Rev.
A2, December 2000
FQPF1P50
Elerical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Bod...
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