PRELIMINARY DATA SHEET
FP4050
2-WATT POWER PHEMT
FEATURES ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz
DRAIN BOND PAD SOURCE BOND PAD (2X)
DESCRIPTION AND APPLICATIONS
GATE BOND PAD
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHE...
