SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES
Description
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES
ISSUE 3 JANUARY 1996 PIN CONFIGURATION
7 PARTMARKING DETAILS SEE TUNING CHARACTERISTICS
FMMV2101 to FMMV2109
1 3 2
!
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Reverse Voltage Forward Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VR IF Ptot Tj:Tstg VALUE 30 200 330 -55 to +150 UNIT V mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Reverse Breakdown Voltage Reverse current Series Inductance SYMBOL VBR IR LS 3.
0 280 0.
15 400 MIN.
30 20 TYP.
MAX.
UNIT V nA nH ppm/ °C pF CONDITIONS.
IR = 10µA VR = 25V f=250MHz Lead length≈1.
5mm VR = 4V, f=1MHz Lead length≈1.
5mm f=1MHz
Diode Capacitance TCC Temperature Coefficient Case Capacitance CC
TUNING CHARACTERISTICS (at Tamb = 25°C).
Type No.
FMMV2101 FMMV2103 FMMV2104 FMMV2105 FMMV2107 FMMV2108 FMMV2109 Nominal Capacitance (pF) VR = 4V, f=1MHz Nom.
6.
8 10.
0 12.
0 15.
0 22.
0 27.
0 33.
0
Q Figure of MERIT VR = 4V, f=50MHz 450 400 400 400 350 300 280
Min.
6.
1 9.
0 10.
8 13.
5 19.
8 24.
3 29.
3
Max.
7.
5 11.
0 13.
2 16.
5 24.
2 29.
7 36.
3
Turning Ratio C2 / C30 f=1MHz Min.
Max.
2.
5 3.
3 2.
6 3.
3 2.
6 3.
3 2.
6 3.
3 2.
7 3.
3 2.
7 3.
3 2.
7 3.
3
Partmark Detail 6R 6G 6H 6J 6L 6M 6N
* SELECTED DEVICE RANGE OFFERED ONLY
3 - 185
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