Dual 30V N-Channel PowerTrench SyncFET
Description
FDS6990S
May 2001
FDS6990S
Dual 30V N-Channel PowerTrench® SyncFET ™
General Description
The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology.
The performance of the FDS6990S as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.
Features
• 7.
5A, 30 V.
RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.
5 V • • • Includes SyncFET Schottky diode Low gate charge (11 nC typical) High performance trench technology for extremely low RDS(ON) • High power and current handling capability
Applications
• DC/DC converter • Motor drives
D2 D
DD2
DD1 D1 D
5
Q1
4 3 2
Q2
6 7
G1
SO-8
Pin 1 SO-8
S1 G G2 S S2 S S
8
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
T A =25 oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
7.
5 20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.
6 1 0.
9 –55 to +150 °C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6990S
© 2001 Fairchild Semiconductor Corporation
Device FDS6990S
Reel Size 13’’
Tape width 12mm
Quantity 2500 units
FDS6990S Rev B(W)
FDS6990S
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
T A = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Bo...
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