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FDP20N40

Fairchild Semiconductor

N-Channel Power MOSFET


FDP20N40
FDP20N40

PDF File FDP20N40 PDF File


Description
FDH20N40 / FDP20N40 October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.
216 Ohm, N-Channel SMPS Power MOSFET Applications Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Converter • High Speed Switching Features • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Package JEDEC TO-247 SOURCE DRAIN GATE Symbol JEDEC TO-220AB D SOURCE DRAIN GATE G DRAIN (FLANGE) DRAIN (FLANGE) S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC = 25oC, VGS = 10V) Continuous (TC = Pulsed (Note 1) PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw 100oC, VGS = 10V) 20 14 80 273 1.
82 -55 to 175 300 (1.
6mm from case) 10ibf*in (1.
1N*m) A A A W W/oC o o Ratings 400 ±30 Units V V C C Thermal Characteristics RθJC Rθ CS Rθ JA Rθ JA Thermal Resistance Junction to Case Thermal Resistance Case to Sink, Flat, Greased Surface Thermal Resistance Junction to Ambient (TO-247) Thermal Resistance Junction to Ambient (TO-220) 0.
55 0.
24 40 62 o C/W C/W C/W oC/W o o ©2002 Fairchild Semiconductor Corporation FDH20N40 / FDP20N40 Rev.
A, FDH20N40 / FDP20N40 Package Marking and Ordering Information Device Marking FDH20N40 FDP20N40 Device FDH20N40 FDP20N40 Package TO-247 TO-220 Reel Size Tube Tube Tape Width Quantity 30 50 Electrical Characteristics TC = 25°C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Statics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V V/°C Reference to 25°C ID = 1mA VGS = 10V, ID = 10A VDS = VGS, ID = 250µA VD...



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