30V N-Channel MOSFET
Description
FDD6690A
March 2015
FDD6690A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Applications
• DC/DC converter • Motor Drives
Features
• 46 A, 30 V
RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.
5 V
• Low gate charge
• Fast Switching Speed
• High performance trench technology for extremely low RDS(ON)
D G
S DTO-P-2A5K2 (TO-252)
D
G S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30 ±20 46 12 100 56 3.
3 1.
5 –55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.
7
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
45
RθJA
(Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6690A
FDD6690A
D-PAK (TO-252)
Reel Size 13’’
Tape width 16mm
Units
V V A
W
°C
°C/W
Quantity 2500 units
©2003 Fairchild Semiconductor Corp.
FDD6690A Rev.
2.
1
FDD6690A
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 12A
IAS
Drain-Source Avalanche Current
Off Characteristics
BVDSS
∆BVDSS ∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltag...
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