30V P-Channel PowerTrench MOSFET
Description
FDD6685
March 2015
FDD6685
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.
5V – 25V).
Features
• –40 A, –30 V.
RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 30 mΩ @ VGS = –4.
5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Qualified to AEC Q101
D G
S G
S TO-252
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed, PW ≤ 100µs (Note 1b)
PD
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings –30
±25
–40 ...
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