PNP Transistor
Description
Ordering number:EN3477
FC142
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications (with Bias Resistance)
Features
· On-chip bias resistance (R1=4.
7kΩ, R2=10kΩ).
· Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC142 is formed with two chips, being equivalent to the 2SA1653, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Electrical Connection
C1:Collector 1 C2:Collector 2 B2:Base 2 EC:Emitter Common B1:Base 1 SANYO:CP5
Package Dimensions
unit:mm 2066
[FC142]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC PT Tj Tstg 1 unit Conditions Ratings –50 –50 –6 –100 –200 200 300 150 –55 to +150 Unit V V V mA mA mW mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Cob VCB=–40V, IE=0 VCB=–40V, IE=0 VEB=–5V, IC=0 VCE=–5V, IC=–10mA VCE=–5V, IC=5mA VCB=–10V, f=1MHz –50 –50 –0.
7 –0.
95 3.
3 –0.
85 –1.
3 4.
7 0.
47 –0.
95 –2.
0 6.
1 –262 50 200 5.
1 –0.
1 –0.
3 MHz pF V V V V V kΩ –340 Conditons Ratings min typ max –0.
1 –0.
5 –485 Unit µA µA µA
VCE(sat) IC=–10mA, IB=–0.
5mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–100µA, RBE=∞ VI(off) VI(on) R1 R1/R2 VCE=–5V, IC=–100µA VCE=–0.
2V, IC=–10mA
Note:The specifications shown above are for each individual transistor.
Marking:142
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534...
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