PNP Transistor
Description
Ordering number:EN3073
FC105
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
Features
· On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
· The FC105 is formed with two chips, being equivalent to the 2SA1341, placed in one package.
· Excellent in thermal equilibrium and pair capability.
Package Dimensions
unit:mm 2067
[FC105]
Electrical Connection
E1:Emitter1 B1:Base1 C2:Collector2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings –50 –50 –10 –100 –200 200 300 150 –55 to+150 Unit V V V mA mA mW mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Cob VCB=–40V, IE=0 VCE=–40V, IB=0 VEB=–5V, IC=0 VCE=–5V, IC=–5mA VCE=–10V, IC=–5mA VCB=–10V, f=1MHz –50 –50 –0.
8 –1.
0 32 0.
9 –1.
1 –2.
5 47 1.
0 –1.
5 –5.
0 62 1.
1 –30 50 200 5.
1 –0.
1 –0.
3 MHz pF V V V V V kΩ –53 Conditions Ratings min typ max –0.
1 –0.
5 –80 Unit µA µA µA
VCE(sat) IC=–5mA, IB=–0.
25mA V(BR)CBO IC=–10µA, IE=0 V(BR)CEO IC=–100µA, RBE=∞ VI(off) VI(on) R1 R1/R2 VCE=–5V, IC=–100µA VCE=–0.
2V, IC=–5mA
Note: The specifications shown above are for each individual transistor.
Marking:105
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4109...
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