HIGH-SPEED SWITCHING USE
Description
MITSUBISHI Nch POWER MOSFET
FK10VS-10
HIGH-SPEED SWITCHING USE
FK10VS-10
OUTLINE DRAWING
r
1.
5MAX.
Dimensions in mm 4.
5 1.
3
10.
5MAX.
1.
5MAX.
8.
6 ± 0.
3 9.
8 ± 0.
5
3.
0 +0.
3 –0.
5
0
+0.
3 –0
1 5 0.
8 0.
5
q w e wr
2.
6 ± 0.
4
¡VDSS .
.
.
.
500V ¡rDS (ON) (MAX) .
1.
13Ω ¡ID .
.
.
.
10A ¡Integrated Fast Recovery Diode (MAX.
) .
.
150ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 500 ±30 10 30 10 30 125 –55 ~ +150 –55 ~ +150 1.
2
4.
5
Unit V V A A A A W °C °C g
Feb.
1999
(1.
5)
MITSUBISHI Nch POWER MOSFET
FK10VS-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min.
500 ±30 — — 2 — — 3.
3 — — — — — — — — — — Typ.
— — — — 3 0.
88 4.
40 5.
5 1100 130 20 20 30 95 35 1.
5 — — Max.
— — ±10 1 4 1.
13 5.
65 — — — — — — — — 2.
0 1.
0 150
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forw...
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