HIGH-SPEED SWITCHING USE
Description
MITSUBISHI Nch POWER MOSFET
FK10UM-12
HIGH-SPEED SWITCHING USE
FK10UM-12
OUTLINE DRAWING
10.
5MAX.
r
3.
2 7.
0
Dimensions in mm
4.
5 1.
3
16
φ 3.
6
3.
8MAX.
1.
0
12.
5MIN.
0.
8
2.
54
2.
54
4.
5MAX.
0.
5
2.
6
q w e
wr q GATE w DRAIN e SOURCE r DRAIN e
¡VDSS 600V ¡rDS (ON) (MAX) .
.
1.
18Ω ¡ID .
.
.
.
10A ¡Integrated Fast Recovery Diode (MAX.
) .
.
.
150ns
q
TO-220
APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 600 ±30 10 30 10 30 150 –55 ~ +150 –55 ~ +150 2.
0
Unit V V A A A A W °C °C g
Feb.
1999
MITSUBISHI Nch POWER MOSFET
FK10UM-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min.
600 ±30 — — 2 — — 4.
5 — — — — — — — — — — Typ.
— — — — 3 0.
90 4.
50 7.
0 1500 170 25 25 35 130 45 1.
5 — — Max.
— — ±10 1 4 1.
18 5.
90 — — — — — — — — 2.
0 0.
83 150
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admitta...
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