Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Description
3SK318
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
ADE-208-600(Z) 1st. Edition February 1998 Features
Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) Excellent cross modulation characteristics Capable low voltage operation; +B= 5V
Outline
CMPAK-4
2 3 1 4
1. Source 2. Gate1 3. Gate2 4. Drain
Note: Marking is “YB–”.
3SK318
Absol...
Hitachi Semiconductor
3SK318 PDF File
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