3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
Linear Integrated Systems
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltage (NOTE 1) Drain Current Storage Temperature Po...
