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2SK3136

Hitachi Semiconductor

N-Channel MOSFET


Description
2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B (Z) 3rd. Edition February 1999 Features Low on-resistance R DS(on) = 4.5 mΩ typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3136 Absolute Maximum Ratings (Ta = 25°C) Item Drain to...



Hitachi Semiconductor

2SK3136

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