N-Channel MOSFET
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2367/2SK2368
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeter)
1.
0
15.
7 MAX.
4 3.
2±0.
2 4.
7 MAX.
1.
5
FEATURES
2SK2368: RDS (on) = 0.
6 Ω (VGS = 10 V, ID = 8.
0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 15 ± 60 120 3.
0 150 15 161 V V A A W W ˚C A mJ
19 MIN.
3.
0±0.
2
• Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings
1
2
3
2.
2±0.
2 5.
45
1.
0±0.
2 5.
45
4.
5±0.
2
2SK2367: RDS (on) = 0.
5 Ω (VGS = 10 V, ID = 8.
0 A)
20.
0±0.
2 6.
0
0.
6±0.
1
2.
8±0.
1
1.
Gate 2.
Drain 3.
Source 4.
Fin (Drain)
MP-88
Drain
–55 to +150 ˚C
Body Diode Gate
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Source
Document No.
TC-2506 (O.
D.
No.
TC-8065) Date Published December 1994 P Printed in Japan
©
7.
0
• Low On-Resistance
1995 1994
2SK2367/2SK2368
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN.
TYP.
0.
4 0.
5 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 1 600 300 30 30 40 70 25 43 10 20 1.
0 400 1.
8 2.
5 5.
0 100 ± 100 MAX.
0.
5 0.
6 3.
5 V...
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