Silicon P-Channel MOSFET
Description
2SJ553(L),2SJ553(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-650B (Z) 3rd.
Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.
028 Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
LDPAK
4 D 1 G 1 4
2
3
2
3
1.
Gate 2.
Drain 3.
Source 4.
Drain
S
2SJ553(L),2SJ553(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –60 ±20 –30 –120 –30
Unit V V A A A A mJ W °C °C
Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: I AP
Note3 Note3 Note2
–30 77 75 150 –55 to +150
EAR
Pch Tch
Tstg
1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25° C 3.
Value at Tch = 25° C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –60 ±20 — — –1.
0 — — 15 — — — — — — — — — Typ — — — — — 0.
028 0.
038 25 2500 1300 300 25 150 350 220 –0.
95 100 Max — — –10 ±10 –2.
0 0.
037 0.
055 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –30A, VGS = 0 I F = –30A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –15A, VGS = –10V Note4 I D = –15A, VGS = –4V Note4 I D = –15A, VDS = –10V Note4 VDS = –10V VGS = 0 f = 1MHz VGS = –10V, I D = –15A RL = 2Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf
Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Note: 4.
Pulse test...
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