METAL GATE RF SILICON FET
Description
TetraFET
D1003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE
DM
PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE
DIM A B C D E F G H I J K M
mm 24.
76 18.
42 45° 6.
35 3.
17 Dia.
5.
71 12.
7 Dia.
6.
60 0.
13 4.
32 3.
17 26.
16
Tol.
0.
13 0.
13 5° 0.
13 0.
13 0.
13 0.
13 REF 0.
02 0.
13 0.
13 0.
25
Inches 0.
975 0.
725 45° 0.
25 0.
125 Dia.
0.
225 0.
500 Dia.
0.
260 0.
005 0.
170 0.
125 1.
03
Tol.
0.
005 0.
005 5° 0.
005 0.
005 0.
005 0.
005 REF 0.
001 0.
005 0.
005 0.
010
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 117W 70V ±20V 15A –65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
Website: http://www.
semelab.
co.
uk E-mail: sales@semelab.
co.
uk
Prelim.
6/99
D1003UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 60W VDS = 28V f = 175MHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.
3A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 3A 1 2.
4 16 50 20:1 70
Typ.
Max.
Unit
V 1 1 7 mA µA V S dB % — 180 90 7.
5 pF pF pF
VGS(th) Gate Threshold Voltage *
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
H...
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