Monolithic Dual Switching Diode - Leshan Radio Company
Description
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
This switching diode has the following features: .
Low Leakage Current Applications .
Medium Speed Switching Times .
Available in 8 mm Tape and Reel
Use BAV170LT1 to order the 7 inch/3,000 unit reel
Use BAV170LT3 to order the 13 inch/10,000 unit reel
3 CATHODE
1 ANODE
2 ANODE
BAV170LT1
3
1 2
CASE 318–08, STYLE 9 SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS
VR IF I FM(surge)
70 200 500
Characteristic
Symbol
Max
Total Device Dissipation FR- 5 Board (1) TA = 25°C Derate above 25°C
P D 225 1.
8
Thermal Resistance, Junction to Ambient
RθJA
556
Total Device Dissipation Alumina Substrate (2) TA = 25°C Derate above 25°C
P D 300 2.
4
Thermal Resistance, Junction to Ambient
R θJA
417
Junction and Storage Temperature DEVICE MARKING
T J , T stg
-55 to +150
BAV170LT1 = JX
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc)
Reverse Voltage Leakage Current (VR = 70 Vdc)
Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150°C)
Diode Capacitance (V R = 0 V, f = 1.
0 MHz)
Forward Voltage (I F = 1.
0 mAdc)
Forward Voltage (I F = 10 mAdc)
Forward Voltage (I F = 50 mAdc)
Forward Voltage (I F = 150 mAdc)
Reverse Recovery Time
R L = 100 Ω
(I F = I R = 10 mAdc) (Figure 1)
1.
FR-5 = 1.
0 x 0.
75 x 0.
062 in.
V(BR) IR CD VF
t rr
70 — — 5.
0 — 80 — 2.
0 — 900 — 1000 — 1100 — 1250 — 3.
0
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
Unit Vdc mAdc mAdc
Unit mW
mW°C °C/W mW
mW°C °C/W
°C
Unit
Vdc nAdc
pF mVdc
µs
G8–1/2
LESHAN RADIO COMPANY, LTD.
+10 V 820 Ω 2.
0 k
100 µH
IF
0.
1µF
tr
t p
10%
t
IF
BAV170LT1
t rr t
0.
1 µF
50 Ω OUTPUT PULSE GENERATOR
DUT
50 Ω INPUT SAMPLING OSCILLOSCOPE V R
90% INPUT SIGNAL
IR
i R(REC) = 1.
0 mA
OUTPUT PULSE (I F = I R = 10 mA; MEASURED
at i...
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