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HN1K06FU

Toshiba Semiconductor

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type


HN1K06FU
HN1K06FU

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Description
HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Analog Switch Applications Unit: mm · · · · High input impedance and extremely low drive current.
Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.
5 to 1.
5 V Switching speed is fast.
Suitable for high-density mounting because of a compact package Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA Weight: 6.
8 mg ― ― 2-2J1C Note: TOTAL rating Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 3 V, ID = 0.
1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.
5 V VDS = 3 V, VGS=0 V, f = 1 MHz VDS = 3 V, VGS=0 V, f = 1 MHz VDS = 3 V, VGS=0 V, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0 to 2.
5 V VDD = 3 V, ID = 10 mA, VGS = 0 to 2.
5 V Min ¾ 20 ¾ 0.
5 35 ¾ ¾ ¾ ¾ ¾ ¾ Typ.
¾ ¾ ¾ ¾ 62 3.
5 14 5.
3 16 0.
28 0.
34 Max 1 ¾ 1 1.
5 ¾ 6.
0 ¾ ¾ ¾ ¾ Unit mA V mA V mS W pF pF pF ms ¾ 1 2002-01-16 HN1K06FU Equivalent Circuit (top view) 6 5 4 Marking 6 5 4 Q1 Q2 KJ 1 (Q1, Q2 common) 2 3 1 2 3 Switching Time Test Circuit (a) Test circuit ID 2.
5 V 0 10 ms VIN IN 50 W RL OUT VDD = 3 V D.
U.
< = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C (b) VIN VGS 2.
5 V 10% 90% 0 VDD (c) VOUT VDS VDS (ON) 90% tr ton toff 10% VDD tf 2 2002-01-16 HN1K06FU (Q1, Q2 common) ID – VDS 100 2...



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